inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 4N10 features drain current i d = 4a@ t c =25 drain source voltage- : v dss = 100v(min) static drain-source on-resistance : r ds(on) = 0.8 (max) fast switching applications switching power supplies,converters,ac and dc motor controls absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 100 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 4 a i dm drain current-single plused 16 a p d total dissipation @t c =25 20 w t j max. operating junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.63 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 4N10 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =250 a 100 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v v sd diode forward on-voltage i s = 4a ;v gs = 0 2.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 2a 0.8 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =100v; v gs = 0 250 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 200 pf c rss reverse transfer capacitance 30 c oss output capacitance 100 t r rise time v gs =10v; i d =2a; v dd =50v; r l =50 25 ns t d(on) turn-on delay time 20 t f fall time 20 t d(off) turn-off delay time 25 pdf pdffactory pro www.fineprint.cn
|
